Vishay 150 V 20 A Diode Schottky 3-Pin D2PAK VB20150S-E3/8W
- RS Stock No.:
- 165-6313
- Mfr. Part No.:
- VB20150S-E3/8W
- Brand:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 165-6313
- Mfr. Part No.:
- VB20150S-E3/8W
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Diode | |
| Mount Type | Surface Mount | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 150V | |
| Diode Configuration | Common Cathode | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 25mA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 160A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.45mm | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Diode | ||
Mount Type Surface Mount | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 150V | ||
Diode Configuration Common Cathode | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 25mA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 160A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.45mm | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage