Vishay 200V 1A, Fast Recovery Epitaxial Diode Diode, 2-Pin DO-219AB VS-1EFH02-M3/I
- RS Stock No.:
- 165-4913
- Mfr. Part No.:
- VS-1EFH02-M3/I
- Brand:
- Vishay
Currently unavailable
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- RS Stock No.:
- 165-4913
- Mfr. Part No.:
- VS-1EFH02-M3/I
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Mounting Type | Surface Mount | |
| Package Type | DO-219AB | |
| Maximum Continuous Forward Current | 1A | |
| Peak Reverse Repetitive Voltage | 200V | |
| Diode Configuration | Single | |
| Rectifier Type | General Purpose | |
| Diode Type | Fast Recovery Epitaxial Diode | |
| Pin Count | 2 | |
| Maximum Forward Voltage Drop | 930mV | |
| Number of Elements per Chip | 1 | |
| Diode Technology | Silicon Junction | |
| Peak Reverse Recovery Time | 23ns | |
| Peak Non-Repetitive Forward Surge Current | 35A | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Mounting Type Surface Mount | ||
Package Type DO-219AB | ||
Maximum Continuous Forward Current 1A | ||
Peak Reverse Repetitive Voltage 200V | ||
Diode Configuration Single | ||
Rectifier Type General Purpose | ||
Diode Type Fast Recovery Epitaxial Diode | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 930mV | ||
Number of Elements per Chip 1 | ||
Diode Technology Silicon Junction | ||
Peak Reverse Recovery Time 23ns | ||
Peak Non-Repetitive Forward Surge Current 35A | ||
- COO (Country of Origin):
- CN
FRED Pt® Hyperfast Recovery Rectifiers
The FRED Pt® (Fast Recovery Epitaxial Diode) range of products from Vishay are hyperfast diodes containing platinum (Pt) doping technology. This series offers extremely low leakage currents at high temperatures together with a high maximum junction operating temperature of 175°C. Typical recovery times are 35nds or less.
Range Features
Range Features
VRRM from 200V to 600V
Lowest Qrr at 125°C
Lowest VF at IF
Improved efficiency in switched mode power supplies
Soft recovery for reduced EMI at high dIF/dt
TJ (max) 175 °C
AEC-Q101 qualified
VRRM from 200V to 600V
Lowest Qrr at 125°C
Lowest VF at IF
Improved efficiency in switched mode power supplies
Soft recovery for reduced EMI at high dIF/dt
TJ (max) 175 °C
AEC-Q101 qualified
Diodes and Rectifiers, Vishay Semiconductor
Related links
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