STMicroelectronics 1200V 15A, Schottky Diode, 2-Pin DO-247LL STPSC15H12WL
- RS Stock No.:
- 164-7028
- Mfr. Part No.:
- STPSC15H12WL
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 164-7028
- Mfr. Part No.:
- STPSC15H12WL
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Mounting Type | Through Hole | |
Package Type | DO-247LL | |
Maximum Continuous Forward Current | 15A | |
Peak Reverse Repetitive Voltage | 1200V | |
Diode Configuration | Single | |
Diode Type | Schottky | |
Pin Count | 2 | |
Maximum Forward Voltage Drop | 2.25V | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Peak Non-Repetitive Forward Surge Current | 630A | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Mounting Type Through Hole | ||
Package Type DO-247LL | ||
Maximum Continuous Forward Current 15A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Diode Configuration Single | ||
Diode Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 2.25V | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 630A | ||
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF