STMicroelectronics 1200V 10A, SiC Schottky Diode, 2-Pin DO-247LL STPSC10H12WL

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Subtotal (1 tube of 30 units)*

£99.21

(exc. VAT)

£119.04

(inc. VAT)

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30 - 30£3.307£99.21
60 +£3.225£96.75

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RS Stock No.:
164-6968
Mfr. Part No.:
STPSC10H12WL
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Mounting Type

Through Hole

Package Type

DO-247LL

Maximum Continuous Forward Current

10A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.25V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

420A

The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases

No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF

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