Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1
- RS Stock No.:
- 133-9889
- Mfr. Part No.:
- IDH06G65C5XKSA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 133-9889
- Mfr. Part No.:
- IDH06G65C5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Mounting Type | Through Hole | |
Package Type | TO-220 | |
Maximum Continuous Forward Current | 6A | |
Peak Reverse Repetitive Voltage | 650V | |
Diode Configuration | Single | |
Diode Type | SiC Schottky | |
Pin Count | 2 + Tab | |
Maximum Forward Voltage Drop | 2.1V | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Peak Non-Repetitive Forward Surge Current | 54A | |
Select all | ||
---|---|---|
Brand Infineon | ||
Mounting Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current 6A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Diode Type SiC Schottky | ||
Pin Count 2 + Tab | ||
Maximum Forward Voltage Drop 2.1V | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 54A | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
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