Nexperia 650 V 16 A Rectifier & Schottky Diode Merged Pin Schottky 2-Pin D2PAK PSC1665JJ
- RS Stock No.:
- 554-323
- Mfr. Part No.:
- PSC1665JJ
- Brand:
- Nexperia
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Subtotal (1 unit)*
£6.91
(exc. VAT)
£8.29
(inc. VAT)
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In Stock
- 793 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £6.91 |
| 10 - 49 | £5.60 |
| 50 - 99 | £4.28 |
| 100 + | £3.80 |
*price indicative
- RS Stock No.:
- 554-323
- Mfr. Part No.:
- PSC1665JJ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-263 R2P | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | PSC1665J | |
| Diode Configuration | Single | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 1250μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 65A | |
| Maximum Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.35mm | |
| Height | 4.46mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-263 R2P | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series PSC1665J | ||
Diode Configuration Single | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 1250μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 65A | ||
Maximum Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.35mm | ||
Height 4.46mm | ||
Automotive Standard No | ||
The Nexperia Leading edge Silicon Carbide (SiC) Schottky diode is used for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behaviour combined with an outstanding figure-of-merit. The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.
High power density
Reduced system costs
System miniaturization
Reduced EMI
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