STMicroelectronics 1200V 20A, SiC Schottky Rectifier & Schottky Diode, 8-Pin HU3PAK STPSC20G12L2Y
- RS Stock No.:
- 365-182
- Mfr. Part No.:
- STPSC20G12L2Y
- Brand:
- STMicroelectronics
Subtotal (1 reel of 600 units)*
£3,993.00
(exc. VAT)
£4,791.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
600 + | £6.655 | £3,993.00 |
*price indicative
- RS Stock No.:
- 365-182
- Mfr. Part No.:
- STPSC20G12L2Y
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Mounting Type | Surface Mount | |
Package Type | HU3PAK | |
Maximum Continuous Forward Current | 20A | |
Peak Reverse Repetitive Voltage | 1200V | |
Series | STPS | |
Diode Configuration | Single | |
Diode Type | SiC Schottky | |
Pin Count | 8 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Mounting Type Surface Mount | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current 20A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Series STPS | ||
Diode Configuration Single | ||
Diode Type SiC Schottky | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics SiC diode is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. Based on the latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
ECOPACK2 compliant component
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
ECOPACK2 compliant component
Related links
- STMicroelectronics 1200V 20A 8-Pin HU3PAK STPSC20G12L2Y
- STMicroelectronics 1200V 20A 2-Pin DO-247 LL STPSC20G12WLY
- STMicroelectronics 1200V 20A 2-Pin DO-247 LL STPSC20G12WL
- Infineon 1200V 20A D2PAK IDK20G120C5XTMA1
- ROHM 1200V 20A 3-Pin TO-247N SCS220KE2GC11
- Microchip 1200V 20A TO-220 MSC020SDA120K
- Microchip 1200V 20A TO-247 MSC020SDA120B
- ROHM 1200V 20A 3-Pin D2PAK SCS220KNHRTRL