P-Channel MOSFET, 3 A, 20 V, 6-Pin DSBGA Texas Instruments CSD25304W1015T
- RS Stock No.:
- 914-2945
- Mfr. Part No.:
- CSD25304W1015T
- Brand:
- Texas Instruments
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 914-2945
- Mfr. Part No.:
- CSD25304W1015T
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | DSBGA | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 92 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.15V | |
| Minimum Gate Threshold Voltage | 0.55V | |
| Maximum Power Dissipation | 750 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.5mm | |
| Typical Gate Charge @ Vgs | 3.3 nC @ 4.5 V | |
| Series | NexFET | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type P | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DSBGA | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 92 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.15V | ||
Minimum Gate Threshold Voltage 0.55V | ||
Maximum Power Dissipation 750 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 1mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.5mm | ||
Typical Gate Charge @ Vgs 3.3 nC @ 4.5 V | ||
Series NexFET | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
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