N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-220F onsemi FCPF850N80Z
- RS Stock No.:
- 864-7931
- Mfr. Part No.:
- FCPF850N80Z
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 864-7931
- Mfr. Part No.:
- FCPF850N80Z
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 710 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 28.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.9mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Series | SuperFET II | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.07mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 710 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 28.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.9mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Length 10.36mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Series SuperFET II | ||
Minimum Operating Temperature -55 °C | ||
Height 16.07mm | ||
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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.