N-Channel MOSFET, 289 A, 30 V, 8-Pin Power 56 onsemi FDMS7650DC
- RS Stock No.:
- 864-4939
- Mfr. Part No.:
- FDMS7650DC
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 864-4939
- Mfr. Part No.:
- FDMS7650DC
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 289 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | Power 56 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6mm | |
| Typical Gate Charge @ Vgs | 147 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 5mm | |
| Series | PowerTrench | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 289 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type Power 56 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6mm | ||
Typical Gate Charge @ Vgs 147 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 5mm | ||
Series PowerTrench | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.