onsemi N-Channel MOSFET, 2.3 A, 100 V, 3 + Tab-Pin SOT-223 IRFM120ATF
- RS Stock No.:
- 807-8717
- Mfr. Part No.:
- IRFM120ATF
- Brand:
- ON Semiconductor
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 807-8717
- Mfr. Part No.:
- IRFM120ATF
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.3 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 6.7mm | |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
| Width | 3.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.7mm | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.7mm | ||
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MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.