onsemi PowerTrench P-Channel MOSFET, 2.9 A, 30 V, 6-Pin MLP FDMA1430JP
- RS Stock No.:
- 806-3475
- Mfr. Part No.:
- FDMA1430JP
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 806-3475
- Mfr. Part No.:
- FDMA1430JP
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | MLP | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 7.2 nC @ 4.5 V | |
| Width | 2mm | |
| Height | 0.725mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type MLP | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 7.2 nC @ 4.5 V | ||
Width 2mm | ||
Height 0.725mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
P-Channel PowerTrench® MOSFET, and NPN Bipolar Transistor, Fairchild Semiconductor
This device is designed specifically as a single package solution for load switching in cellular handset applications. It features a 50V NPN Bipolar Junction Transistor (BJT) and a 30V P-channel PowerTrench® MOSFET in the space saving MicroFET 2x2mm package.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.