Dual N-Channel MOSFET, 9 A, 24 V, 8-Pin ECH onsemi ECH8655R-TL-H

Discontinued product

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	24 V
Package Type	ECH
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	17 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	1.4 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	16.8 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Width	2.3mm
Length	2.9mm
Maximum Operating Temperature	+150 °C
Height	0.9mm