N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK onsemi FDB070AN06A0
- RS Stock No.:
- 759-8942
- Mfr. Part No.:
- FDB070AN06A0
- Brand:
- ON Semiconductor
Subtotal (1 unit)*
£0.62
(exc. VAT)
£0.74
(inc. VAT)
Units | Per unit |
|---|---|
| 1 + | £0.62 |
*price indicative
- RS Stock No.:
- 759-8942
- Mfr. Part No.:
- FDB070AN06A0
- Brand:
- ON Semiconductor
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 175 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 11.33mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 4.83mm | |
| Series | PowerTrench | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 175 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Transistor Material Si | ||
Width 11.33mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Height 4.83mm | ||
Series PowerTrench | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
