N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1
- RS Stock No.:
- 754-5434
- Mfr. Part No.:
- IPB107N20N3GATMA1
- Brand:
- Infineon
855 In stock - FREE next working day delivery available
Added
Price Each
£6.40
(exc. VAT)
£7.68
(inc. VAT)
| Units | Per unit |
| 1 - 9 | £6.40 |
| 10 - 24 | £5.76 |
| 25 - 49 | £5.44 |
| 50 - 99 | £5.06 |
| 100 + | £4.67 |
- RS Stock No.:
- 754-5434
- Mfr. Part No.:
- IPB107N20N3GATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 88 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | D2PAK (TO-263) |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 11 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.31mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Transistor Material | Si |
| Width | 9.45mm |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |
- RS Stock No.:
- 754-5434
- Mfr. Part No.:
- IPB107N20N3GATMA1
- Brand:
- Infineon