N-Channel MOSFET, 2.7 A, 100 V, 8-Pin SOIC Vishay SI4102DY-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
710-3305
Mfr. Part No.:
SI4102DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

100 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

158 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.6 nC @ 6 V, 7.1 nC @ 10 V

Transistor Material

Si

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

COO (Country of Origin):
CN

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor



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