N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK onsemi FDB8441
- RS Stock No.:
- 671-0343
- Mfr. Part No.:
- FDB8441
- Brand:
- ON Semiconductor
Subtotal (1 unit)*
£2.02
(exc. VAT)
£2.42
(inc. VAT)
Units | Per unit |
|---|---|
| 1 - 9 | £2.02 |
| 10 - 19 | £1.94 |
| 20 + | £1.85 |
*price indicative
- RS Stock No.:
- 671-0343
- Mfr. Part No.:
- FDB8441
- Brand:
- ON Semiconductor
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 215 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | PowerTrench | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 215 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series PowerTrench | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
Automotive N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
