3 N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV120ENEAR
- RS Stock No.:
- 153-1930
- Mfr. Part No.:
- PMV120ENEAR
- Brand:
- Nexperia
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 153-1930
- Mfr. Part No.:
- PMV120ENEAR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.1 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT23, TO-236AB | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 246 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.7V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 6.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Typical Gate Charge @ Vgs | 5.9 nC | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 3 | |
| Length | 3mm | |
| Width | 1.4mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT23, TO-236AB | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 246 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.7V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 6.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 5.9 nC | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 3 | ||
Length 3mm | ||
Width 1.4mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits