Nexperia Hex P-Channel MOSFET, -410 mA, -30 V, 8-Pin DFN1010B-6, SOT1216 PMDXB1200UPEZ
- RS Stock No.:
- 153-0747
- Mfr. Part No.:
- PMDXB1200UPEZ
- Brand:
- Nexperia
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 153-0747
- Mfr. Part No.:
- PMDXB1200UPEZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | -410 mA | |
| Maximum Drain Source Voltage | -30 V | |
| Package Type | DFN1010B-6, SOT1216 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -0.95V | |
| Minimum Gate Threshold Voltage | -0.45V | |
| Maximum Power Dissipation | 4030 mW | |
| Maximum Gate Source Voltage | 8 V | |
| Width | 1.05mm | |
| Number of Elements per Chip | 6 | |
| Typical Gate Charge @ Vgs | 0.7 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.36mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current -410 mA | ||
Maximum Drain Source Voltage -30 V | ||
Package Type DFN1010B-6, SOT1216 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -0.95V | ||
Minimum Gate Threshold Voltage -0.45V | ||
Maximum Power Dissipation 4030 mW | ||
Maximum Gate Source Voltage 8 V | ||
Width 1.05mm | ||
Number of Elements per Chip 6 | ||
Typical Gate Charge @ Vgs 0.7 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 1.15mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.36mm | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits