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MOSFETs
Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
RS Stock No.:
133-0157
Mfr. Part No.:
CSD87334Q3DT
Brand:
Texas Instruments
View all MOSFETs
Discontinued product
RS Stock No.:
133-0157
Mfr. Part No.:
CSD87334Q3DT
Brand:
Texas Instruments
Technical Reference
Legislation and Compliance
Product Details
Specifications
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
Attribute
Value
Channel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10.5 nC
Length
3.4mm
Width
3.4mm
Height
1.05mm
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
RS Stock No.:
133-0157
Mfr. Part No.:
CSD87334Q3DT
Brand:
Texas Instruments
Technical Reference
Legislation and Compliance
Product Details
Specifications
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
Attribute
Value
Channel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10.5 nC
Length
3.4mm
Width
3.4mm
Height
1.05mm
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C