Semikron SKM100GB063D Dual IGBT Module, 130 A 600 V, 7-Pin SEMITRANS2, Screw Mount
- RS Stock No.:
- 125-1116
- Mfr. Part No.:
- SKM100GB063D
- Brand:
- Semikron
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 125-1116
- Mfr. Part No.:
- SKM100GB063D
- Brand:
- Semikron
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron | |
| Maximum Continuous Collector Current | 130 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 2 | |
| Configuration | Dual | |
| Package Type | SEMITRANS2 | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Half Bridge | |
| Dimensions | 94 x 34 x 30.5mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand Semikron | ||
Maximum Continuous Collector Current 130 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 2 | ||
Configuration Dual | ||
Package Type SEMITRANS2 | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Half Bridge | ||
Dimensions 94 x 34 x 30.5mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- SK
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.