The Renesas evaluation board is designed to provide a quick and comprehensive method for evaluating the HIP2210 100 V, 3 A source, 4 A sink, high frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation board to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator.

Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100 V high-side bootstrap reference
6 V to 18 V bias supply operation
Fast 15 ns typical propagation delay and 2 ns typical propagation delay match supports up to 1 MHz operation