onsemi Single PIN Diode, 100 mA, 80 V, 2-Pin X3-DFN2
- RS Stock No.:
- 233-6852P
- Mfr. Part No.:
- NSDP301MX3T5G
- Brand:
- onsemi
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In Stock
- 9,795 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 150 - 360 | £0.089 |
| 375 - 735 | £0.077 |
| 750 - 1485 | £0.068 |
| 1500 + | £0.062 |
*price indicative
- RS Stock No.:
- 233-6852P
- Mfr. Part No.:
- NSDP301MX3T5G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | PIN Diode | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 100mA | |
| Maximum Reverse Voltage Vr | 80V | |
| Maximum Capacitance | 0.33pF | |
| Mount Type | Surface | |
| Package Type | X3-DFN2 | |
| Pin Count | 2 | |
| Maximum Series Resistance @ Maximum If | 1.3Ω | |
| Maximum Forward Voltage Vf | 0.81V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.66mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Series | NSDP301MX3 | |
| Height | 0.33mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type PIN Diode | ||
Diode Configuration Single | ||
Maximum Forward Current If 100mA | ||
Maximum Reverse Voltage Vr 80V | ||
Maximum Capacitance 0.33pF | ||
Mount Type Surface | ||
Package Type X3-DFN2 | ||
Pin Count 2 | ||
Maximum Series Resistance @ Maximum If 1.3Ω | ||
Maximum Forward Voltage Vf 0.81V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 0.66mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Series NSDP301MX3 | ||
Height 0.33mm | ||
Automotive Standard No | ||
The ON Semiconductor NSDP301MX3T5G is a single PIN Diode for Attenuator and RF Switch, the low rs characteristics enables it to be used in high frequency applications. This PIN diode is designed to realize compact and efficient designs. The device is available in a X3DFN2 miniature package which enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
It has a low Series resistance of typical 1.3ꭥ
It has small interterminal capacitance of typical 0.33 pF
The device has less Parasitic components