onsemi NSDP301MX3T5G Single PIN Diode, 100 mA, 80 V, 2-Pin X3-DFN2
- RS Stock No.:
- 233-6852
- Mfr. Part No.:
- NSDP301MX3T5G
- Brand:
- onsemi
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
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| 1500 + | £0.065 | £0.98 | £64.50 |
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- RS Stock No.:
- 233-6852
- Mfr. Part No.:
- NSDP301MX3T5G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Diode Configuration | Single | |
| Product Type | PIN Diode | |
| Maximum Forward Current If | 100mA | |
| Maximum Reverse Voltage Vr | 80V | |
| Maximum Capacitance | 0.33pF | |
| Mount Type | Surface | |
| Package Type | X3-DFN2 | |
| Pin Count | 2 | |
| Maximum Series Resistance @ Maximum If | 1.3Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 810mV | |
| Maximum Operating Temperature | 150°C | |
| Series | NSDP301MX3 | |
| Length | 660μm | |
| Height | 330μm | |
| Width | 360μm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Diode Configuration Single | ||
Product Type PIN Diode | ||
Maximum Forward Current If 100mA | ||
Maximum Reverse Voltage Vr 80V | ||
Maximum Capacitance 0.33pF | ||
Mount Type Surface | ||
Package Type X3-DFN2 | ||
Pin Count 2 | ||
Maximum Series Resistance @ Maximum If 1.3Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 810mV | ||
Maximum Operating Temperature 150°C | ||
Series NSDP301MX3 | ||
Length 660μm | ||
Height 330μm | ||
Width 360μm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
The ON Semiconductor NSDP301MX3T5G is a single PIN Diode for Attenuator and RF Switch, the low rs characteristics enables it to be used in high frequency applications. This PIN diode is designed to realize compact and efficient designs. The device is available in a X3DFN2 miniature package which enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
It has a low Series resistance of typical 1.3ꭥ
It has small interterminal capacitance of typical 0.33 pF
The device has less Parasitic components
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