Hamamatsu, S12023-10 Near Infrared Radiation Si PIN Photodiode, Through Hole TO-18
- RS Stock No.:
- 482-423
- Mfr. Part No.:
- S12023-10
- Brand:
- Hamamatsu Photonics
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Subtotal (1 unit)*
£86.48
(exc. VAT)
£103.78
(inc. VAT)
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- 50 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | £86.48 |
| 5 + | £83.88 |
*price indicative
- RS Stock No.:
- 482-423
- Mfr. Part No.:
- S12023-10
- Brand:
- Hamamatsu Photonics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Hamamatsu Photonics | |
| Spectrums Detected | Near Infrared Radiation | |
| Wavelength of Peak Sensitivity | 800nm | |
| Package Type | TO-18 | |
| Mounting Type | Through Hole | |
| Number of Pins | 3 | |
| Diode Material | Si | |
Select all | ||
|---|---|---|
Brand Hamamatsu Photonics | ||
Spectrums Detected Near Infrared Radiation | ||
Wavelength of Peak Sensitivity 800nm | ||
Package Type TO-18 | ||
Mounting Type Through Hole | ||
Number of Pins 3 | ||
Diode Material Si | ||
- COO (Country of Origin):
- JP
The Hamamatsu Photonics Near-infrared Si APD can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
Stable operation at low bias
High speed response
High sensitivity and low noise
High speed response
High sensitivity and low noise
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