Infineon 1Mbit 25ns NVRAM, 16-Pin SOIC, CY14V101Q3-SFXI
- RS Stock No.:
- 194-9094
- Mfr. Part No.:
- CY14V101Q3-SFXI
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£12.77
(exc. VAT)
£15.32
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
---|---|
1 - 4 | £12.77 |
5 - 9 | £9.97 |
10 + | £9.56 |
*price indicative
- RS Stock No.:
- 194-9094
- Mfr. Part No.:
- CY14V101Q3-SFXI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 1Mbit | |
Organisation | 128K x 8 bit | |
Interface Type | SPI | |
Data Bus Width | 8bit | |
Maximum Random Access Time | 25ns | |
Mounting Type | Surface Mount | |
Package Type | SOIC | |
Pin Count | 16 | |
Dimensions | 10.49 x 7.59 x 2.36mm | |
Length | 10.49mm | |
Width | 7.59mm | |
Height | 2.36mm | |
Maximum Operating Supply Voltage | 3.6 V | |
Maximum Operating Temperature | +85 °C | |
Number of Words | 128K | |
Number of Bits per Word | 8bit | |
Minimum Operating Temperature | -40 °C | |
Minimum Operating Supply Voltage | 3 V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 25ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 16 | ||
Dimensions 10.49 x 7.59 x 2.36mm | ||
Length 10.49mm | ||
Width 7.59mm | ||
Height 2.36mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 128K | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 3 V | ||
- COO (Country of Origin):
- PH
The Cypress CY14V101Q3 combines a 1 Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cell provides highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). Both STORE and RECALL operations can also be initiated by the user through SPI Instruction.
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