Infineon 1Mbit NVRAM, 16-Pin SOIC, CY14V101QS-SF108XI
- RS Stock No.:
- 194-9095
- Mfr. Part No.:
- CY14V101QS-SF108XI
- Brand:
- Infineon
Subtotal (1 tube of 46 units)*
£144.072
(exc. VAT)
£172.868
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
---|---|---|
46 + | £3.132 | £144.07 |
*price indicative
- RS Stock No.:
- 194-9095
- Mfr. Part No.:
- CY14V101QS-SF108XI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 1Mbit | |
Organisation | 128K x 8 bit | |
Data Bus Width | 8bit | |
Mounting Type | Surface Mount | |
Package Type | SOIC | |
Pin Count | 16 | |
Dimensions | 10.49 x 7.59 x 2.36mm | |
Length | 10.49mm | |
Width | 7.59mm | |
Height | 2.36mm | |
Maximum Operating Supply Voltage | 3.6 V | |
Maximum Operating Temperature | +85 °C | |
Minimum Operating Supply Voltage | 2.7 V | |
Number of Words | 128K | |
Number of Bits per Word | 8bit | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Data Bus Width 8bit | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 16 | ||
Dimensions 10.49 x 7.59 x 2.36mm | ||
Length 10.49mm | ||
Width 7.59mm | ||
Height 2.36mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Words 128K | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
The Cypress CY14V101QS combines a 1-Mbit nvSRAM with a QPI interface. The QPI allows writing and reading the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of selected opcodes. The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide highly reliable storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) take place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instructions.
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