Infineon 4Mbit 45ns NVRAM, 48-Pin FBGA, CY14B104NA-BA25XI
- RS Stock No.:
- 194-9075
- Mfr. Part No.:
- CY14B104NA-BA25XI
- Brand:
- Infineon
Subtotal (1 tray of 299 units)*
£6,568.731
(exc. VAT)
£7,882.537
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tray* |
---|---|---|
299 + | £21.969 | £6,568.73 |
*price indicative
- RS Stock No.:
- 194-9075
- Mfr. Part No.:
- CY14B104NA-BA25XI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 4Mbit | |
Organisation | 256K x 16 bit | |
Interface Type | Parallel | |
Data Bus Width | 16bit | |
Maximum Random Access Time | 45ns | |
Mounting Type | Surface Mount | |
Package Type | FBGA | |
Pin Count | 48 | |
Dimensions | 10 x 6 x 0.21mm | |
Length | 10mm | |
Width | 6mm | |
Height | 0.21mm | |
Maximum Operating Supply Voltage | 3.6 V | |
Maximum Operating Temperature | +85 °C | |
Minimum Operating Supply Voltage | 2.7 V | |
Number of Bits per Word | 16bit | |
Minimum Operating Temperature | -40 °C | |
Number of Words | 256K | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 256K x 16 bit | ||
Interface Type Parallel | ||
Data Bus Width 16bit | ||
Maximum Random Access Time 45ns | ||
Mounting Type Surface Mount | ||
Package Type FBGA | ||
Pin Count 48 | ||
Dimensions 10 x 6 x 0.21mm | ||
Length 10mm | ||
Width 6mm | ||
Height 0.21mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 16bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 256K | ||
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
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