Infineon 4Mbit 45ns NVRAM, 54-Pin TSOP, CY14B104NA-ZSP45XI
- RS Stock No.:
- 194-9082
- Mfr. Part No.:
- CY14B104NA-ZSP45XI
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£28.12
(exc. VAT)
£33.74
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1 - 9 | £28.12 |
| 10 - 24 | £25.65 |
| 25 - 49 | £24.97 |
| 50 - 74 | £24.34 |
| 75 + | £23.72 |
*price indicative
- RS Stock No.:
- 194-9082
- Mfr. Part No.:
- CY14B104NA-ZSP45XI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 256K x 16 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 16bit | |
| Maximum Random Access Time | 45ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 54 | |
| Dimensions | 22.51 x 10.26 x 1.05mm | |
| Length | 22.51mm | |
| Width | 10.26mm | |
| Height | 1.05mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Bits per Word | 16bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 256K | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 256K x 16 bit | ||
Interface Type Parallel | ||
Data Bus Width 16bit | ||
Maximum Random Access Time 45ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 54 | ||
Dimensions 22.51 x 10.26 x 1.05mm | ||
Length 22.51mm | ||
Width 10.26mm | ||
Height 1.05mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 16bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 256K | ||
- COO (Country of Origin):
- TW
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
Related links
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