Diodes Inc N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-23 DMN53D0U-7
- RS Stock No.:
- 921-1114P
- Mfr. Part No.:
- DMN53D0U-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£23.50
(exc. VAT)
£28.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 7,600 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.047 |
| 1000 - 1900 | £0.046 |
| 2000 - 2900 | £0.045 |
| 3000 + | £0.044 |
*price indicative
- RS Stock No.:
- 921-1114P
- Mfr. Part No.:
- DMN53D0U-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 520 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.6 nC @ 4.5 V | |
| Length | 3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 520 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.6 nC @ 4.5 V | ||
Length 3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Forward Diode Voltage 1.4V | ||
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