Diodes Inc N-Channel MOSFET, 14.2 A, 40 V, 8-Pin PowerDI3333-8 DMN4010LFG-7
- RS Stock No.:
- 921-1108P
- Mfr. Part No.:
- DMN4010LFG-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£29.70
(exc. VAT)
£35.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 220 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 480 | £0.297 |
| 500 - 980 | £0.264 |
| 1000 - 2480 | £0.231 |
| 2500 + | £0.227 |
*price indicative
- RS Stock No.:
- 921-1108P
- Mfr. Part No.:
- DMN4010LFG-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14.2 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerDI3333-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.35mm | |
| Length | 3.35mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.72V | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 14.2 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerDI3333-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 3.35mm | ||
Length 3.35mm | ||
Number of Elements per Chip 1 | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.72V | ||
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