Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7
- RS Stock No.:
- 921-1105P
- Mfr. Part No.:
- DMN53D0LDW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£21.00
(exc. VAT)
£25.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.042 |
| 1000 - 1900 | £0.041 |
| 2000 - 2900 | £0.04 |
| 3000 + | £0.039 |
*price indicative
- RS Stock No.:
- 921-1105P
- Mfr. Part No.:
- DMN53D0LDW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 360 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 310 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 0.6 nC @ 4.5 V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 360 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 4.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 310 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.35mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 0.6 nC @ 4.5 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
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