Diodes Inc N-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-323 DMN3065LW-7
- RS Stock No.:
- 921-1091P
- Mfr. Part No.:
- DMN3065LW-7
- Brand:
- DiodesZetex
Subtotal 50 units (supplied on a continuous strip)*
£6.80
(exc. VAT)
£8.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,050 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 + | £0.136 |
*price indicative
- RS Stock No.:
- 921-1091P
- Mfr. Part No.:
- DMN3065LW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 85 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 770 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V | |
| Length | 2.2mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 770 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 11.7 nC @ 10 V | ||
Length 2.2mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.35mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.