Diodes Inc N-Channel MOSFET, 43 A, 30 V, 3-Pin DPAK DMN3010LK3-13
- RS Stock No.:
- 921-1076P
- Mfr. Part No.:
- DMN3010LK3-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£28.50
(exc. VAT)
£34.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 480 | £0.285 |
| 500 - 980 | £0.254 |
| 1000 - 2480 | £0.226 |
| 2500 + | £0.221 |
*price indicative
- RS Stock No.:
- 921-1076P
- Mfr. Part No.:
- DMN3010LK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Length | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.7mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Length 6.2mm | ||
Number of Elements per Chip 1 | ||
Width 6.7mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.