Diodes Inc Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 DMN2023UCB4-7
- RS Stock No.:
- 921-1066P
- Mfr. Part No.:
- DMN2023UCB4-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£29.10
(exc. VAT)
£34.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 480 | £0.291 |
| 500 - 980 | £0.276 |
| 1000 - 2480 | £0.229 |
| 2500 + | £0.218 |
*price indicative
- RS Stock No.:
- 921-1066P
- Mfr. Part No.:
- DMN2023UCB4-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 24 V | |
| Package Type | X1-WLB1818 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1.45 W | |
| Transistor Configuration | Common Drain | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.8mm | |
| Transistor Material | Si | |
| Length | 1.8mm | |
| Typical Gate Charge @ Vgs | 29 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Height | 0.24mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 24 V | ||
Package Type X1-WLB1818 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.45 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 2 | ||
Width 1.8mm | ||
Transistor Material Si | ||
Length 1.8mm | ||
Typical Gate Charge @ Vgs 29 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
Height 0.24mm | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.