Diodes Inc N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 DMN2022UFDF-7
- RS Stock No.:
- 921-1063P
- Mfr. Part No.:
- DMN2022UFDF-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£81.50
(exc. VAT)
£98.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 1200 | £0.163 |
| 1250 - 4950 | £0.116 |
| 5000 + | £0.105 |
*price indicative
- RS Stock No.:
- 921-1063P
- Mfr. Part No.:
- DMN2022UFDF-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | U-DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 2.03 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 18 nC @ 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.05mm | |
| Transistor Material | Si | |
| Width | 2.05mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.58mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type U-DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 2.03 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 18 nC @ 8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.05mm | ||
Transistor Material Si | ||
Width 2.05mm | ||
Number of Elements per Chip 1 | ||
Height 0.58mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.