Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B
- RS Stock No.:
- 921-1057P
- Mfr. Part No.:
- DMN1260UFA-7B
- Brand:
- DiodesZetex
Subtotal 100 units (supplied on a continuous strip)*
£12.90
(exc. VAT)
£15.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 + | £0.129 |
*price indicative
- RS Stock No.:
- 921-1057P
- Mfr. Part No.:
- DMN1260UFA-7B
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | X2-DFN0806 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 0.96 nC @ 4.5 V | |
| Width | 0.85mm | |
| Length | 0.65mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 0.35mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 12 V | ||
Package Type X2-DFN0806 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 0.96 nC @ 4.5 V | ||
Width 0.85mm | ||
Length 0.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 0.35mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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