Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7
- RS Stock No.:
- 921-1032P
- Mfr. Part No.:
- DMN1019USN-7
- Brand:
- DiodesZetex
Subtotal 50 units (supplied on a continuous strip)*
£11.60
(exc. VAT)
£13.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
- Plus 999,997,950 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 + | £0.232 |
*price indicative
- RS Stock No.:
- 921-1032P
- Mfr. Part No.:
- DMN1019USN-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-346 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.8V | |
| Minimum Gate Threshold Voltage | 0.35V | |
| Maximum Power Dissipation | 1.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 50.6 nC @ 8 V | |
| Length | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.3mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-346 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.8V | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 1.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Width 1.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 50.6 nC @ 8 V | ||
Length 3.1mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.3mm | ||
Forward Diode Voltage 1.2V | ||
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