Diodes Inc Dual N/P-Channel-Channel MOSFET, 8.2 A, 30 V, 8-Pin SOIC DMC3026LSD-13
- RS Stock No.:
- 921-1029
- Mfr. Part No.:
- DMC3026LSD-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 20 units)*
£9.08
(exc. VAT)
£10.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 40 unit(s) ready to ship
- Plus 1,320 unit(s) shipping from 22 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | £0.454 | £9.08 |
*price indicative
- RS Stock No.:
- 921-1029
- Mfr. Part No.:
- DMC3026LSD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 8.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 29 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.95mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13.2 nC @ 10 V | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 8.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.95mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13.2 nC @ 10 V | ||
Length 4.95mm | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.