N-Channel MOSFET, 2 A, 20 V, 3-Pin MCPH3 onsemi MCH3481-TL-W
- RS Stock No.:
- 920-9805
- Mfr. Part No.:
- MCH3481-TL-W
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 50 units)*
£15.75
(exc. VAT)
£18.90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.315 | £15.75 |
| 250 - 450 | £0.158 | £7.90 |
| 500 - 950 | £0.133 | £6.65 |
| 1000 - 2950 | £0.115 | £5.75 |
| 3000 + | £0.104 | £5.20 |
*price indicative
- RS Stock No.:
- 920-9805
- Mfr. Part No.:
- MCH3481-TL-W
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MCPH3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 540 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -9 V, +9 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.6mm | |
| Typical Gate Charge @ Vgs | 2.9 nC @ 4 V | |
| Height | 0.83mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MCPH3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 540 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -9 V, +9 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.6mm | ||
Typical Gate Charge @ Vgs 2.9 nC @ 4 V | ||
Height 0.83mm | ||
Forward Diode Voltage 1.2V | ||