IXYS HiperFET N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50
- RS Stock No.:
- 920-0870
- Mfr. Part No.:
- IXFK48N50
- Brand:
- IXYS
Subtotal (1 tube of 25 units)*
£477.15
(exc. VAT)
£572.575
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 + | £19.086 | £477.15 |
*price indicative
- RS Stock No.:
- 920-0870
- Mfr. Part No.:
- IXFK48N50
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 48 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET | |
| Package Type | TO-264AA | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 500 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 5.13mm | |
| Length | 19.96mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 270 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 26.16mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET | ||
Package Type TO-264AA | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 500 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 5.13mm | ||
Length 19.96mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 270 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 26.16mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Series
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