Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-247AC IRFP9140NPBF
- RS Stock No.:
- 919-5028
- Mfr. Part No.:
- IRFP9140NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 25 units)*
£34.30
(exc. VAT)
£41.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 400 unit(s) ready to ship
- Plus 25 unit(s) shipping from 21 October 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £1.372 | £34.30 |
| 50 - 100 | £1.304 | £32.60 |
| 125 - 225 | £1.248 | £31.20 |
| 250 - 600 | £1.194 | £29.85 |
| 625 + | £1.111 | £27.78 |
*price indicative
- RS Stock No.:
- 919-5028
- Mfr. Part No.:
- IRFP9140NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 117 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5.3mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 15.9mm | |
| Typical Gate Charge @ Vgs | 97 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.3mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 117 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5.3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 15.9mm | ||
Typical Gate Charge @ Vgs 97 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.3mm | ||
- COO (Country of Origin):
- MX
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF
This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.
Features & Benefits
• P-Channel configuration allows for flexible circuit designs
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance
Applications
• Utilised in motor control for improved efficiency
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching
What is the maximum gate threshold voltage for the device?
It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.
How does the RDS(on) value impact performance?
The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.
What types of circuits can benefit from this MOSFET?
It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.
What is the typical gate charge required for operation?
The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
