N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK Infineon IRF540NSPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
919-4959
Mfr. Part No.:
IRF540NSPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

71 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.