Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB IRLZ34NPBF
- RS Stock No.:
- 919-4898
- Mfr. Part No.:
- IRLZ34NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£45.40
(exc. VAT)
£54.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 750 unit(s) ready to ship
- Plus 250 unit(s) ready to ship from another location
- Plus 400 unit(s) shipping from 21 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.908 | £45.40 |
| 100 - 200 | £0.708 | £35.40 |
| 250 - 450 | £0.663 | £33.15 |
| 500 - 1200 | £0.618 | £30.90 |
| 1250 + | £0.572 | £28.60 |
*price indicative
- RS Stock No.:
- 919-4898
- Mfr. Part No.:
- IRLZ34NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF
This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.
Features & Benefits
• Low on-resistance of 35mΩ reduces power loss
• High power dissipation capability of 68W enhances performance
• Operating temperature range from -55°C to +175°C ensures versatility
• Typical gate charge of 25nC at 5V enables faster switching
• Compact TO-220AB package enables efficient PCB layout
• High power dissipation capability of 68W enhances performance
• Operating temperature range from -55°C to +175°C ensures versatility
• Typical gate charge of 25nC at 5V enables faster switching
• Compact TO-220AB package enables efficient PCB layout
Applications
• Utilised in DC-DC converters for efficient power conversion
• Appropriate for motor driver circuits in industrial automation
• Effective in power management systems for renewable energy
• Used in high-speed switching for telecommunications
• Appropriate for motor driver circuits in industrial automation
• Effective in power management systems for renewable energy
• Used in high-speed switching for telecommunications
What is the maximum gate-source voltage?
The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.
How does temperature affect its performance?
The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.
Can it be used in high-frequency applications?
Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.
What are the implications of low Rds(on)?
A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
