Infineon HEXFET N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF
- RS Stock No.:
- 919-4876
- Mfr. Part No.:
- IRF520NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£21.85
(exc. VAT)
£26.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 250 unit(s) ready to ship
- Plus 150 unit(s) ready to ship from another location
- Plus 250 unit(s) shipping from 21 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.437 | £21.85 |
| 100 - 200 | £0.362 | £18.10 |
| 250 - 450 | £0.341 | £17.05 |
| 500 - 1200 | £0.314 | £15.70 |
| 1250 + | £0.293 | £14.65 |
*price indicative
- RS Stock No.:
- 919-4876
- Mfr. Part No.:
- IRF520NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.7 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.69mm | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.7 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.69mm | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Length 10.54mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF
This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.
Features & Benefits
• High current capacity of 9.7A enhances performance
• Robust design ensures functionality in extreme conditions
• Low on-resistance of 200mΩ minimises power loss
• Fast switching capabilities improve efficiency
• Compatible with TO-220AB package for straightforward installation
• Robust design ensures functionality in extreme conditions
• Low on-resistance of 200mΩ minimises power loss
• Fast switching capabilities improve efficiency
• Compatible with TO-220AB package for straightforward installation
Applications
• Power management in automation systems
• Switching in electrical circuits
• Motor drive circuits for improved efficiency
• High-frequency in electronics
• Switching in electrical circuits
• Motor drive circuits for improved efficiency
• High-frequency in electronics
How does the low on-resistance impact performance?
The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.
What is the significance of the temperature range?
The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.
Can this component handle short pulses of higher current?
Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.
What considerations should I have when installing?
Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
