Infineon HEXFET N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-220AB IRFZ46NPBF
- RS Stock No.:
- 919-4848
- Mfr. Part No.:
- IRFZ46NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£42.00
(exc. VAT)
£50.50
(inc. VAT)
FREE delivery for orders over £50.00
Being discontinued
- Final 700 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.84 | £42.00 |
| 100 - 200 | £0.655 | £32.75 |
| 250 - 450 | £0.613 | £30.65 |
| 500 - 1200 | £0.571 | £28.55 |
| 1250 + | £0.529 | £26.45 |
*price indicative
- RS Stock No.:
- 919-4848
- Mfr. Part No.:
- IRFZ46NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 53 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 17 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.69mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 53 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.69mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 53A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFZ46NPBF
This MOSFET is essential for high-efficiency applications in automation and electronics. It effectively manages significant currents and voltages, making it applicable in various industrial settings. Its advanced design supports reliable operation in extreme temperatures, addressing diverse electronic needs while simplifying circuit designs.
Features & Benefits
• Continuous drain current capability of 53A for demanding loads
• Maximum power dissipation of 107W for effective thermal management
• Low on-resistance of 17mΩ, improving efficiency
• Enhancement mode design allows for versatile application
• Defined gate threshold voltage specifications ensure precise control
Applications
• Power conversion in industrial automation systems
• Motor control and driving circuits
• Power management systems for energy-efficient designs
• Implementation in switch mode power supplies for consistency
• Electronic switching requiring swift response
Can it operate at high temperatures?
Yes, it operates efficiently at temperatures up to +175°C.
What current can it handle at elevated temperatures?
At 100°C, it can safely manage a continuous drain current of 37A.
How do I ensure optimal thermal performance during installation?
Using a TO-220AB package with adequate heat sinking can effectively minimise thermal resistance and ensure performance.
What are the gate threshold voltage specifications?
The gate threshold voltage is specified to range between 2V and 4V for accurate operational control.
Is it suitable for use in power supplies?
Yes, it is effective in switch mode power supplies due to its rapid switching capabilities and low on-resistance.
