Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB IRF3710PBF
- RS Stock No.:
- 919-4775
- Mfr. Part No.:
- IRF3710PBF
- Brand:
- Infineon
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Subtotal (1 tube of 50 units)*
£49.05
(exc. VAT)
£58.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 200 unit(s) ready to ship
- Plus 300 unit(s) shipping from 22 October 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.981 | £49.05 |
| 100 - 200 | £0.785 | £39.25 |
| 250 - 450 | £0.736 | £36.80 |
| 500 - 950 | £0.687 | £34.35 |
| 1000 + | £0.638 | £31.90 |
*price indicative
- RS Stock No.:
- 919-4775
- Mfr. Part No.:
- IRF3710PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 57 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 9.02mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 57 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Height 9.02mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF3710PBF
This MOSFET is a durable power semiconductor that is essential in various electronic applications. It is designed for high efficiency, excelling in settings that require low resistance and superior thermal performance, making it important for contemporary electronics in fields such as automation and mechanical systems.
Features & Benefits
• Utilises HEXFET technology for low on-resistance
• Handles a maximum continuous drain current of 57A
• Functions effectively within a drain-source voltage of 100V
• Enables fast switching capabilities to enhance overall performance
• Designed for operation at a maximum junction temperature of +175°C
• Optimised for thermal management with minimal heat generation
• Handles a maximum continuous drain current of 57A
• Functions effectively within a drain-source voltage of 100V
• Enables fast switching capabilities to enhance overall performance
• Designed for operation at a maximum junction temperature of +175°C
• Optimised for thermal management with minimal heat generation
Applications
• Utilised in automotive power systems for efficient energy management
• Suitable for power supply circuits to enhance energy efficiency
• Applicable in motor control systems for high current scenarios
• Effective in industrial automation for consistent performance under load
• Suitable for power supply circuits to enhance energy efficiency
• Applicable in motor control systems for high current scenarios
• Effective in industrial automation for consistent performance under load
What is the significance of the low on-resistance in this MOSFET?
Low on-resistance reduces power losses and enhances efficiency, which is crucial for high-performance applications.
Can it be used in high-temperature environments?
Yes, it operates effectively up to a maximum junction temperature of +175°C, fitting for challenging applications.
How does the gate threshold voltage affect operation?
The gate threshold voltage of 2V to 4V ensures effective switching, allowing for precise control in various circuit designs.
What type of mounting is suitable for this device?
This MOSFET is intended for through-hole mounting, facilitating secure installation in numerous applications.
Is there any thermal management needed during operation?
While the design offers good thermal performance, appropriate heat sinking may be advantageous in high power dissipation situations.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
