Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB IRF3205PBF
- RS Stock No.:
- 919-4763
- Mfr. Part No.:
- IRF3205PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£52.90
(exc. VAT)
£63.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 500 unit(s) ready to ship
- Plus 999,999,450 unit(s) shipping from 30 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.058 | £52.90 |
| 100 - 200 | £0.846 | £42.30 |
| 250 - 450 | £0.794 | £39.70 |
| 500 - 950 | £0.741 | £37.05 |
| 1000 + | £0.688 | £34.40 |
*price indicative
- RS Stock No.:
- 919-4763
- Mfr. Part No.:
- IRF3205PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.54mm | |
| Transistor Material | Si | |
| Width | 4.69mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 146 nC @ 10 V | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.54mm | ||
Transistor Material Si | ||
Width 4.69mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 146 nC @ 10 V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF
This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.
Features & Benefits
• Capable of operating at high temperatures up to +175°C
• Offers fast switching characteristics for improved performance
• Excellent avalanche rating for added durability
• Enhancement mode design provides stable operation
• Designed for ease of use in through-hole mounting
• Offers fast switching characteristics for improved performance
• Excellent avalanche rating for added durability
• Enhancement mode design provides stable operation
• Designed for ease of use in through-hole mounting
Applications
• Used for power conversion in power supplies
• Suitable for motor control
• Utilised in battery management systems
• Applied in high-frequency switching circuits
• Integrated into consumer electronics power systems
• Suitable for motor control
• Utilised in battery management systems
• Applied in high-frequency switching circuits
• Integrated into consumer electronics power systems
What thermal characteristics should be considered for this component?
The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.
How can the specifications influence overall performance?
The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.
What methods can be applied for effective heat dissipation?
Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
