N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 Infineon IRLL014NPBF
- RS Stock No.:
- 919-4738
- Mfr. Part No.:
- IRLL014NPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 919-4738
- Mfr. Part No.:
- IRLL014NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.8 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.7mm | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.7mm | |
| Transistor Material | Si | |
| Height | 1.7mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.8 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.7mm | ||
Transistor Material Si | ||
Height 1.7mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF
This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a VITAL role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a Compact design.
Features & Benefits
• Maximum continuous drain current of 2.8A for dependable performance
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration
Applications
• Utilised in automation systems for effective motor control
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency
What is the recommended mounting technique for optimal performance?
Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.
How should the maximum gate-source voltage be considered when designing circuits?
It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.
Can this component handle high temperatures in operational environments?
It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.
Is it compatible with low-voltage battery systems?
Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.