Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-07L-E3
- RS Stock No.:
- 919-0938
- Mfr. Part No.:
- SUM110P06-07L-E3
- Brand:
- Vishay
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- RS Stock No.:
- 919-0938
- Mfr. Part No.:
- SUM110P06-07L-E3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 110 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3.75 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 230 nC @ 10 V | |
Transistor Material | Si | |
Width | 9.65mm | |
Maximum Operating Temperature | +175 °C | |
Length | 10.41mm | |
Number of Elements per Chip | 1 | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 230 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
• TrenchFET® power MOSFET
• Package with low thermal resistance